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The BC850CMTF is an NPN epitaxial silicon transistor in a SOT-23 package. It features a collector-emitter voltage of 45 V, a collector-base voltage of 50 V, and a maximum DC collector current of 100 mA. The device has a power dissipation rating of 310 mW and a transition frequency of 300 MHz. The 'C' suffix indicates a DC current gain (hFE) range of 420 to 800 at IC = 2 mA and VCE = 5 V. The 'TF' suffix denotes tape and reel packing.
Verify the specific hFE binning requirements against the datasheet's Class C specifications before procurement. Confirm that the tape and reel packaging format aligns with automated assembly equipment capabilities. Ensure the component meets all applicable environmental compliance standards required for the final product integration.
Select this component when high DC current gain and low noise characteristics are required for NPN amplification tasks. The SOT-23 package offers a compact footprint suitable for space-constrained designs. Consider the thermal resistance and power dissipation limits when designing heat management strategies for continuous operation.
This part belongs to the BC846/BC847/BC848/BC850 series of general-purpose NPN transistors manufactured by onsemi. It serves as a complement to the PNP counterparts in the BC856 through BC860 series. The device utilizes a standard SOT-23 surface-mount package for efficient PCB layout.
Compatible substitutes include other BC850 variants from different manufacturers offering identical electrical parameters and pin configurations. Verify package compatibility and hFE binning ranges to ensure functional equivalence in existing circuit designs.