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The BC856A is a surface-mount general-purpose PNP bipolar junction transistor manufactured by Diotec Semiconductor. It operates with a maximum collector current of 100 mA and features three distinct DC current gain groups (A, B, C). The device provides a collector-emitter voltage rating of 65 V and a collector-base voltage of 80 V. Power dissipation reaches 300 mW when mounted on a printed circuit board with the minimum recommended pad layout. The unit utilizes an SOT-23 package and supports a junction temperature range from -55°C to +150°C.
Verify the specific suffix against official documentation to confirm the intended grade. The absence of a suffix indicates industrial grade availability. Confirm AEC-Q101 compliance or qualification status if automotive standards are required. Ensure the ordering code matches the desired current gain group and packaging format before finalizing procurement.
Select this component based on the required collector-emitter voltage of 65 V and the specific DC current gain group needed for the circuit. Verify that the thermal resistance requirements align with the PCB copper pad layout specifications. Consider the SOT-23 footprint constraints and ensure the operating temperature range meets the environmental conditions of the target application.
This part belongs to the BC856 through BC860 series of SMD general-purpose PNP transistors. It serves as the high-voltage variant within the lineup, offering superior breakdown ratings compared to lower-voltage counterparts like the BC857 or BC858. The device shares mechanical data and pin configurations with other members of the family while differing in electrical characteristics.
BC856B
The maximum collector-base voltage (VCBO) is 80 V.
Power dissipation is rated at 250 mW generally, but increases to 300 mW when mounted on a PCB with the minimum recommended pad layout.
The 'A' designation corresponds to Group A, which has a minimum DC current gain (hFE) of 90 at IC = 10 µA and 125 at IC = 2 mA.