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The BC856AT,115 is a PNP bipolar junction transistor manufactured by Nexperia (formerly NXP Semiconductors) in the SOT-323 surface-mount package. It features a maximum collector current of 100 mA and a collector-emitter voltage rating of 65 V. The device offers a minimum DC current gain (hFE) of 125 at 2 mA and 5 V, with a transition frequency of 100 MHz. Power dissipation is rated at 200 mW, and it operates within a temperature range of -65°C to +150°C.
Verify the manufacturer designation as Nexperia, which acquired NXP's standard semiconductor products division. Confirm the specific suffix 'AT' indicates tape-and-reel packaging. Ensure RoHS compliance and MSL rating align with assembly requirements. Cross-reference part numbers carefully due to historical branding changes.
Select this component for low-power PNP switching or amplification tasks where small form factor is critical. Compare hFE ranges against circuit requirements for consistent gain. Consider thermal management given the 200 mW power dissipation limit in the SOT-323 package. Verify voltage ratings exceed peak operational stresses.
This device belongs to the BC856 series of PNP transistors, widely used in general-purpose electronics. The BC856 family provides reliable performance for analog and digital switching applications. The SOT-323 variant offers a compact footprint compared to traditional through-hole packages, facilitating automated surface-mount assembly processes.
The maximum collector-emitter voltage (VCEO) is 65 V.
No, the BC856AT,115 is specifically packaged in the SOT-323 surface-mount format.
The minimum DC current gain (hFE) is 125, measured at a collector current of 2 mA and VCE of 5 V.