BC856AW-QF

Overview

The BC856AW-QF is a PNP general-purpose transistor manufactured by Nexperia. It utilizes silicon technology and is housed in an SOT323 (SC-70) surface-mount package. The device features a maximum collector-emitter voltage of 65 V, a collector-base voltage of 80 V, and an emitter-base voltage of 5 V. It supports a maximum DC collector current of 100 mA with a power dissipation of 250 mW. The gain-bandwidth product is 100 MHz, and the collector-emitter saturation voltage is 250 mV. Operating temperatures range from -65 °C to +150 °C.

Feature Summary

• AEC-Q101 qualified for automotive reliability standards
• General-purpose switching and amplification capabilities
• Small SOT323 plastic surface-mount package

Applications

• General-purpose switching circuits
• Amplification stages
• Automotive electronic systems

Procurement Notes

Verify the specific suffix 'QF' against official Nexperia documentation to confirm package and tape-and-reel specifications. Ensure the component meets AEC-Q101 requirements if used in automotive applications. Cross-reference datasheets for exact thermal and electrical limits before finalizing procurement.

Selection Notes

Select this component for designs requiring a small-footprint PNP transistor with automotive qualification. Compare its 100 mA current rating and 65 V voltage limit against circuit demands. Consider the SOT323 package dimensions for space-constrained PCB layouts.

Part Context

This part belongs to the BC856 series of general-purpose bipolar junction transistors. It serves as the PNP complement to NPN devices like the BC846. The series is designed for low-power switching and amplification tasks in consumer and automotive electronics.

Replacement Considerations

Check for direct equivalents such as BC856B or BC856C if gain binning differs. Verify pinout compatibility with existing footprints when substituting.