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The BC856B-13-F is a PNP small-signal transistor manufactured by Diodes Incorporated, housed in an SOT23 surface-mount package. It features a collector-emitter voltage of -65 V and a continuous collector current of -100 mA. The device provides a DC current gain (hFE) range of 220 to 475 at -2.0 mA and -5 V. Electrical characteristics include a transition frequency of 100 MHz typical, with power dissipation rated at 310 mW under standard conditions.
Verify the specific ordering suffix against official manufacturer documentation to confirm packaging quantities and reel specifications. Confirm that the component meets all applicable RoHS and environmental directives required for your specific assembly process before finalizing procurement orders.
Select this component when a PNP transistor with a -65 V collector-emitter rating and moderate current handling is required. Ensure the application operates within the specified thermal limits and utilizes the appropriate complementary NPN device if a push-pull configuration is necessary for the circuit design.
This part belongs to the BC856A through BC858C family of PNP small-signal transistors. The 'B' designation indicates a specific binning of DC current gain characteristics compared to the 'A' or 'C' variants. All members share the same SOT23 physical footprint and pinout configuration.
BC856B-7-F
The top marking code for the BC856B-13-F is K3B.
Yes, the device is totally lead-free and fully RoHS compliant.
The maximum collector-base voltage (VCBO) is -80 V.