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Product Detailed Parameters
- Description：TRANS PNP 65V 0.1A SOT-23
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：65 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：220 @ 2mA, 5V
- Power - Max：200 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23
- Grade：-
- Qualification：-
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Overview
The BC856B RFG is a PNP bipolar junction transistor manufactured by Taiwan Semiconductor Corporation. It utilizes silicon technology and is housed in an SOT-363-3 surface-mount package. The device features a collector-emitter voltage (VCEO) of 65 V, a collector-base voltage (VCBO) of 80 V, and an emitter-base voltage (VEBO) of 5 V. Maximum DC collector current is rated at 100 mA with a power dissipation of 200 mW. The collector-emitter saturation voltage is specified at 300 mV.
Feature Summary
- Dual configuration within a compact SOT-363-3 surface-mount package for space-constrained designs.
- Silicon-based construction optimized for general-purpose switching and amplification tasks.
- Low saturation voltage characteristics to minimize power loss during conduction.
Applications
- General-purpose signal switching circuits
- Amplifier stages requiring low-current handling
- Logic level translation interfaces
Procurement Notes
Verify the specific suffix 'RFG' against the manufacturer's official datasheet to confirm packaging details and compliance status. Ensure the component matches the required pinout for the SOT-363-3 footprint. Cross-reference the part number with authorized distributors to validate authenticity and supply chain integrity before finalizing procurement decisions.
Selection Notes
Select this component when a dual PNP transistor configuration is required in a minimal footprint. The 65 V rating suits low-voltage logic applications. Compare the 200 mW power dissipation limit against thermal requirements. Verify that the 100 mA current capacity meets circuit demands without exceeding safe operating area limits.
Part Context
This part belongs to the BC856 series of PNP transistors produced by Taiwan Semiconductor. It serves as a complement to NPN devices like the BC846. The BC856B variant typically offers specific gain binning compared to other sub-types. It is designed for use in portable electronics and consumer goods where small form factors are critical.
Replacement Considerations
Compatible substitutes include the BC856B from Nexperia or onsemi. Verify pin compatibility and electrical parameters such as VCEO and hFE ranges before substitution. Ensure the replacement package matches the SOT-363-3 specification for direct board replacement.
