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The Diotec Semiconductor BC856BW is a surface-mount general-purpose PNP bipolar junction transistor housed in an SOT-323 package. It features a collector-emitter breakdown voltage of 65 V and a continuous collector current rating of 100 mA. The device offers three distinct DC current gain groups (hFE) ranging from 140 to 800, with a transition frequency of 100 MHz. Power dissipation is rated at 200 mW, and the maximum junction temperature reaches +150°C.
Verify the specific ordering suffix when purchasing. Standard versions are designated as commercial/industrial grade. Versions with suffixes -Q or -AQ meet AEC-Q101 automotive standards. Confirm compliance requirements against the datasheet before finalizing procurement specifications.
Select this component for low-power general-purpose tasks requiring a compact SOT-323 footprint. Ensure the required hFE group aligns with the application's amplification needs. Verify that the 200 mW power dissipation limit accommodates the thermal conditions of the target PCB layout.
This part belongs to the BC856AW through BC859CW series of SMD universal PNP transistors. It serves as a complementary counterpart to NPN devices such as the BC846W. The series provides standardized small-signal performance across various voltage ratings within the same physical package family.
BC857BW
The BC856BW uses the line code '3B'.
No, the standard version is commercial/industrial grade. Automotive-grade versions require the -Q or -AQ suffixes.
The collector-base capacitance (CCBO) is typically 4.5 pF at -VCB = 10 V.