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The BC856BW-AU_R1_000A1 is a PNP general-purpose bipolar junction transistor manufactured by Panjit. It features a maximum collector-emitter voltage (VCEO) of 65 V and a continuous collector current (IC) of 100 mA. The device operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 250 mW. It is housed in an SOT-323-3 surface-mount package and holds AEC-Q101 automotive qualification.
Verify the complete part number including suffixes against official Panjit documentation to ensure correct packaging and marking specifications. Confirm RoHS compliance status and specific reel quantities required for production integration. Cross-reference datasheet revision dates to align with manufacturing updates.
Select this component for designs requiring a PNP transistor with 65 V breakdown in a compact SOT-323 footprint. Ensure thermal management supports the 250 mW dissipation limit at operating temperatures up to 150°C. Verify complementary NPN requirements if differential pairs are needed.
This part belongs to the BC856BW-AU series of PNP general-purpose transistors. It is designed as a complementary device to the BC846/BC847/BC848/BC849 NPN series. The product line targets high-volume consumer and automotive electronics markets requiring standardized small-signal switching and amplification.
Check for direct cross-references from other manufacturers offering identical pinouts and electrical ratings in SOT-323 packages. Verify that substitute parts meet the same AEC-Q101 qualification requirements if used in automotive contexts.