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The BC856CW-G is a PNP bipolar junction transistor manufactured by Comchip Technology. It features a maximum collector-emitter voltage of 65 V and a continuous collector current rating of 100 mA. The device operates within a junction temperature range of -65°C to 150°C and dissipates up to 150 mW of power. Key electrical characteristics include a DC current gain (hFE) minimum of 220 at 2.2 mA and 5 V, a transition frequency of 100 MHz, and a collector cutoff current of 15 nA. The saturation voltage is specified as 650 mV maximum at 5 mA base and 100 mA collector currents.
Verify the specific suffix CW-G against the manufacturer's official datasheet to confirm pinout and electrical tolerances match design requirements. Ensure compliance with RoHS3 specifications if required by the target market regulations. Cross-reference the supplier documentation for moisture sensitivity level and recommended soldering profiles to prevent component damage during assembly processes.
Select this component when a PNP transistor with 65 V breakdown and 100 mA current capability is needed in a small surface-mount footprint. Consider the hFE binning of 220 minimum for high-gain requirements. Compare thermal dissipation limits against circuit load to ensure operation remains within the 150 mW power rating under worst-case ambient conditions.
This part belongs to the BC856 series of PNP transistors, which are widely used in general-purpose electronics. The BC856 family offers various gain bins and packaging options to suit different manufacturing needs. Comchip Technology produces this variant to meet standard industry specifications for small-signal switching and amplification tasks in modern electronic assemblies.
BC856AW-HF and BC856BW-G are listed as similar alternatives. Verify pin compatibility and exact electrical parameter overlaps before substitution. Ensure the replacement part meets the same package type and thermal requirements.