BC857B

BC857B

$0.09
  • Description:45V 200MW 220@2MA,5V 100MA PNP S
  • Series:-

SKU:0d7537ff782f Category: Brand:

  
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Product Detailed Parameters

  • Description:45V 200MW 220@2MA,5V 100MA PNP S
  • Series:-
  • Mfr:Shenzhen Slkormicro Semicon Co., Ltd.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):45 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
  • Power - Max:200 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23
  • Grade:-
  • Qualification:-

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BC857B

Overview

The BC857B is a single PNP bipolar junction transistor manufactured by Shenzhen Slkormicro Semicon Co., Ltd. It features a maximum collector-emitter voltage of 45 V and a continuous collector current rating of 100 mA. The device dissipates up to 250 mW of power and operates within a temperature range of -55°C to +150°C. Key electrical characteristics include a transition frequency of 100 MHz and a minimum DC current gain (hFE) of 220 at 2 mA and 5 V. It is housed in an SOT-23 surface-mount package.

Feature Summary

  • Single PNP configuration for compact circuit integration
  • High DC current gain for efficient signal amplification
  • Wide operating temperature range suitable for diverse environments
  • Surface-mount design optimized for automated assembly

Applications

  • General-purpose switching applications
  • Small-signal amplification circuits
  • Logic level translation interfaces
  • Driver stages for low-power loads

Procurement Notes

Verify the manufacturer designation as Shenzhen Slkormicro Semicon Co., Ltd. during sourcing. Confirm the specific suffix or packaging variant matches project requirements, as standard packages may vary. Ensure compliance with RoHS directives if applicable to the target market. Cross-reference datasheet parameters against critical design limits before finalizing procurement decisions.

Selection Notes

Select this component for designs requiring a PNP transistor with moderate voltage handling and high current gain. The SOT-23 package suits space-constrained layouts. Compare hFE ranges and saturation voltages against alternative suppliers to ensure compatibility with existing circuit thresholds and performance specifications.

Part Context

This part belongs to the BC857 series of small-signal PNP transistors. It serves as a complementary counterpart to NPN variants like the BC847. The series is widely used in consumer electronics and industrial control systems where reliable switching and amplification are required in compact form factors.

Replacement Considerations

  • BC857BW
  • BC857B,235

FAQ

What is the maximum collector-emitter voltage for the BC857B?

The maximum collector-emitter voltage (VCEO) is 45 V.

What is the minimum DC current gain specified for this transistor?

The minimum DC current gain (hFE) is 220, measured at a collector current of 2 mA and a collector-emitter voltage of 5 V.

Which package type does the BC857B utilize?

The BC857B utilizes the SOT-23 surface-mount package.

BC857BBC857B
$0.09
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