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The BC857B is a single PNP bipolar junction transistor manufactured by Shenzhen Slkormicro Semicon Co., Ltd. It features a maximum collector-emitter voltage of 45 V and a continuous collector current rating of 100 mA. The device dissipates up to 250 mW of power and operates within a temperature range of -55°C to +150°C. Key electrical characteristics include a transition frequency of 100 MHz and a minimum DC current gain (hFE) of 220 at 2 mA and 5 V. It is housed in an SOT-23 surface-mount package.
Verify the manufacturer designation as Shenzhen Slkormicro Semicon Co., Ltd. during sourcing. Confirm the specific suffix or packaging variant matches project requirements, as standard packages may vary. Ensure compliance with RoHS directives if applicable to the target market. Cross-reference datasheet parameters against critical design limits before finalizing procurement decisions.
Select this component for designs requiring a PNP transistor with moderate voltage handling and high current gain. The SOT-23 package suits space-constrained layouts. Compare hFE ranges and saturation voltages against alternative suppliers to ensure compatibility with existing circuit thresholds and performance specifications.
This part belongs to the BC857 series of small-signal PNP transistors. It serves as a complementary counterpart to NPN variants like the BC847. The series is widely used in consumer electronics and industrial control systems where reliable switching and amplification are required in compact form factors.
The maximum collector-emitter voltage (VCEO) is 45 V.
The minimum DC current gain (hFE) is 220, measured at a collector current of 2 mA and a collector-emitter voltage of 5 V.
The BC857B utilizes the SOT-23 surface-mount package.