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The Nexperia BC857B,235 is a PNP general-purpose small-signal bipolar junction transistor (BJT) manufactured using silicon epitaxial planar technology. It is housed in the SOT-23 surface-mount package with three pins. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 45 V and a collector-base voltage (VCBO) of 50 V. The device supports a maximum continuous DC collector current (IC) of 100 mA and features a minimum DC current gain (hFE) of 220. It has a power dissipation (Pd) of 250 mW and a transition frequency (fT) of 100 MHz. The operating temperature range spans from -65°C to +150°C.
Verify the specific suffix
Select this component for designs requiring a compact PNP transistor with moderate voltage ratings. Ensure the PCB layout accommodates the SOT-23 footprint dimensions. Consider the thermal constraints given the 250 mW power dissipation limit in enclosed spaces. Verify that the required current gain meets the minimum hFE specification for the intended biasing conditions.
This part belongs to the BC857 series of PNP transistors, which are widely used as complementary devices to NPN counterparts like the BC847 series. The BC857B variant specifically denotes a standardized current gain binning. The BC857B,235 designation indicates the standard tape-and-reel packaging format used for automated surface-mount assembly processes.
Direct substitutes include other manufacturers' BC857B parts in SOT-23 packages. Cross-reference datasheets for pinout compatibility and ensure equivalent electrical parameters such as VCEO, IC, and hFE ranges match the design requirements.