BC857BFSW-7

BC857BFSW-7

$0.03
  • Description:TRANS PNP 45V 0.1A UDFN14123/SWP
  • Series:-

SKU:875b00b0a370 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PNP 45V 0.1A UDFN14123/SWP
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):45 V
  • Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
  • Power - Max:450 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount, Wettable Flank
  • Package / Case:3-UDFN
  • Supplier Device Package:U-DFN1412-3/SWP (Type A)
  • Grade:-
  • Qualification:-

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BC857BFSW-7

Overview

The BC857BFSW-7 is a single PNP bipolar junction transistor manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in an SMD/SMT U-DFN1412-3/SWP package. The device supports a maximum DC collector current of 100 mA and features a collector-emitter voltage (VCEO) rating of 45 V, with a collector-base voltage (VCBO) of 50 V. The emitter-base voltage (VEBO) is specified at 6 V. Key electrical parameters include a collector-emitter saturation voltage of 300 mV, a power dissipation capacity of 450 mW, and a gain-bandwidth product (fT) of 100 MHz. The component operates within a temperature range of -55°C to +150°C.

Feature Summary

  • Single PNP configuration for compact circuit integration
  • Low saturation voltage for efficient switching performance
  • High power dissipation capability relative to small footprint
  • Wide operating temperature range for robust environmental stability

Applications

  • General-purpose signal amplification
  • Switching applications in consumer electronics
  • Interface circuits in industrial control systems
  • Audio processing stages in communication devices

Procurement Notes

Verify the specific package designation U-DFN1412-3/SWP against schematic footprints prior to procurement. Confirm that the 450 mW power dissipation rating aligns with thermal management requirements in the target application. Ensure compatibility with standard surface-mount reflow soldering profiles for the DFN form factor. Cross-reference the manufacturer part number BC857BFSW-7 with official Diodes Incorporated documentation to validate current production status and compliance certifications.

Selection Notes

Select this component when a single PNP transistor with low saturation voltage and moderate power handling is required in a minimal footprint. The U-DFN1412-3 package offers space efficiency compared to traditional SOT packages. Consider the 100 mA current limit and 45 V voltage rating to ensure operation within safe limits. The high power dissipation rating allows for reliable performance in thermally constrained environments without requiring extensive heatsinking.

Part Context

This component belongs to the BC857B series of PNP transistors produced by Diodes Incorporated. It represents a specialized surface-mount variant designed for modern PCB layouts requiring reduced board area. The U-DFN1412-3 package distinguishes it from common SOT-23 or SOT-523 alternatives by offering enhanced thermal performance while maintaining a small physical profile suitable for dense electronic assemblies.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data. Verify pinout compatibility and electrical specifications before considering alternative manufacturers.

BC857BFSW-7BC857BFSW-7
$0.03
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