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Product Detailed Parameters
- Description：TRANS PNP 45V 0.1A SOT-23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
- Power - Max：310 mW
- Frequency - Transition：150MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The BC857BMTF is a PNP epitaxial silicon transistor manufactured by onsemi, housed in an SOT-23 surface-mount package. It features a maximum collector-emitter voltage of -45 V and a maximum collector-base voltage of -50 V. The device supports a continuous DC collector current of -100 mA with a power dissipation rating of 310 mW at 25°C. Electrical characteristics include a minimum DC current gain (hFE) of 200 and a maximum current gain bandwidth product (fT) of 150 MHz. The component operates within a junction temperature range up to 150°C.
Feature Summary
- Designed for general-purpose switching and amplifier applications
- Suitable for automatic insertion in thick and thin-film circuits
- Low noise performance suitable for sensitive signal processing
Applications
- General purpose amplifier circuits
- Signal switching applications
- Thick and thin-film circuit integration
Procurement Notes
Verify the specific hFE classification suffix (A, B, or C) required for your design, as the base model number does not specify gain binning. Confirm that the 'M' suffix indicates the matte finish package variant and the 'TF' suffix denotes tape and reel packaging. Ensure compatibility with the SOT-23 footprint dimensions provided in the mechanical drawings during PCB layout.
Selection Notes
Select this component when a PNP transistor with moderate voltage ratings (-45V VCEO) and high current gain (hFE min 200) is required. The SOT-23 package offers a compact solution for space-constrained designs. Consider the 310 mW power dissipation limit for thermal management. Verify if the low noise characteristic is necessary for the specific application frequency range.
Part Context
This part belongs to the BC856-BC860 series of PNP Epitaxial Silicon Transistors originally from Fairchild Semiconductor, now integrated into ON Semiconductor's portfolio. The series includes complementary NPN transistors (BC846-BC850). The BC857B specifically denotes the B-bin DC current gain classification within the BC857 family.
Replacement Considerations
Compatible substitutes include BC857B from other manufacturers such as Diotec or Nexperia, provided they meet the same electrical specifications and pinout configuration. Verify package dimensions and marking codes when cross-referencing.
