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The Diotec Semiconductor BC857BW is a single PNP general-purpose bipolar junction transistor (BJT) housed in an SOT-323 surface-mount package. It features a maximum collector-emitter voltage of -45 V, a continuous collector current of -100 mA, and a power dissipation rating of 200 mW at 25°C ambient temperature. The device belongs to the Group B current gain category, offering a DC current gain range of 220 to 475 when measured at -IC = 2 mA and -VCE = 5 V. It exhibits a transition frequency of 100 MHz and operates within a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix against official Diotec documentation to confirm exact electrical tolerances and packaging configurations. Confirm whether the component requires AEC-Q101 automotive qualification or standard commercial grade reliability based on the final application environment. Ensure compatibility with the specified SMD/SMT assembly conditions before initiating production.
Select this component for low-power general-purpose tasks requiring a compact SOT-323 footprint. The Group B gain specification provides a balanced performance profile suitable for standard logic interfacing and audio-frequency amplification. Evaluate thermal resistance constraints carefully, as the small outline package limits heat dissipation capabilities compared to larger through-hole alternatives.
This part belongs to the BC856W through BC859CW series of SMD general-purpose PNP transistors. The 'B' designation specifically identifies the middle tier of the manufacturer's current gain classification system. These devices are intended as complementary counterparts to the BC846W through BC849W NPN transistor series.
BC857AW
The datasheet recommends the BC847W as the complementary NPN transistor for use with the BC857BW.
The marking code for the BC857BW is '3F'.
The maximum peak collector current (ICM) is rated at 200 mA.