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Product Detailed Parameters
- Description：TRANS PNP 45V 0.1A SOT-323
- Series：-
- Mfr：Comchip Technology
- Package：Tape & Reel (TR)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：220 @ 2mA, 5V
- Power - Max：150 mW
- Frequency - Transition：100MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SOT-323
- Grade：-
- Qualification：-
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Overview
The BC857BW-HF is a single PNP bipolar junction transistor manufactured by Comchip Technology. It utilizes silicon technology and is housed in an SOT-323-3 surface-mount package. Key electrical ratings include a collector-emitter voltage of 45 V, a collector-base voltage of 50 V, and an emitter-base voltage of 5 V. The device supports a continuous collector current of 100 mA with a power dissipation of 150 mW. It features a DC current gain (hFE) ranging from 220 to 475 and a transition frequency of 100 MHz. The component operates within a temperature range of -65°C to +150°C.
Feature Summary
- Single PNP configuration for general-purpose switching and amplification
- High DC current gain suitable for low-current signal processing
- Automotive-grade reliability with AEC-Q101 qualification
- Compact SMD/SMT footprint for automated assembly
Applications
- General-purpose switching circuits
- Signal amplification stages
- Automotive electronic control modules
- Low-power logic interface applications
Procurement Notes
Verify the specific suffix 'HF' indicates halogen-free compliance as per manufacturer specifications. Confirm that the AEC-Q101 qualification aligns with automotive supply chain requirements. Ensure the SOT-323-3 package dimensions match the target PCB layout constraints. Cross-reference the datasheet revision date to ensure compatibility with current design standards.
Selection Notes
Select this component when a PNP transistor with moderate gain and high-frequency response is required in a compact package. The 150 mW power dissipation limit dictates thermal management considerations for dense layouts. Compare hFE ranges against circuit sensitivity requirements. Verify voltage ratings exceed peak operational transients to ensure robust performance in noisy environments.
Part Context
This part belongs to the BC857 series of PNP transistors produced by Comchip Technology. It shares the SOT-323-3 form factor with other variants like BC857CW-G but offers distinct gain and voltage characteristics. The series is designed for space-constrained applications requiring reliable silicon-based switching capabilities.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers should consult official cross-reference guides or contact the manufacturer directly for validated alternatives.
