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The BC857BW,115 is a PNP general-purpose bipolar junction transistor manufactured by Nexperia USA Inc. It operates with a maximum collector-emitter voltage of 45 V and supports a continuous collector current of 100 mA. The device features a DC current gain (hFE) ranging from 220 to 475 at specified test conditions. Power dissipation is rated at 200 mW, with a transition frequency of 100 MHz. It utilizes the SOT-323 surface-mount package, measuring 2.20 x 1.35 mm with a height of 1.10 mm. The component is RoHS compliant, has an MSL rating of 1, and functions within a temperature range up to +150°C.
Verify the specific suffix against official Nexperia documentation to confirm hFE binning and package type. Ensure compatibility with existing PCB footprints for the SOT-323 form factor. Confirm RoHS3 compliance status for target markets. Check for any recent Product Change Notifications regarding assembly sites or labeling updates before finalizing procurement orders.
Select this component when high current gain is required in a compact footprint. The SOT-323 package offers board space savings compared to larger alternatives while maintaining comparable power dissipation to SOT23 devices. Verify that the 45V breakdown voltage meets circuit requirements. Consider the NPN complement BC847BW for complementary pairs.
This part belongs to the BC857W series of PNP transistors designed for general-purpose use. It serves as a high-gain variant within the family, distinguished by its specific hFE binning. The device is widely used in portable electronics due to its small physical dimensions and robust electrical characteristics suitable for signal processing tasks.
BC857AW,115 and BC857CW,115 are available variants within the same series offering different gain ranges.