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The BC857CE6433HTMA1 is a PNP silicon general-purpose bipolar junction transistor manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 45 V and a continuous collector current of 100 mA. The device operates within a temperature range of -65 °C to +150 °C and has a power dissipation rating of 330 mW. Packaged in an SOT-23-3 surface-mount format, it offers a DC current gain (hFE) ranging from 420 to 800 and a transition frequency of 250 MHz.
Verify the specific suffix E6433HTMA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with AEC-Q100 automotive qualification requirements if used in vehicle systems. Cross-reference datasheet revisions to validate parameter consistency before finalizing procurement orders.
Select this component when high current gain and wide thermal stability are required in a compact form factor. Compare hFE ranges and saturation voltages against alternative PNP transistors to ensure circuit performance meets design thresholds. Verify package footprint compatibility during PCB layout phases.
This part belongs to the BC857 series of PNP general-purpose transistors. It serves as a complement to NPN counterparts like the BC847, providing balanced options for push-pull amplifier stages and logic interface circuits. The series is widely utilized in consumer electronics and industrial control modules requiring reliable small-signal handling.
BC857CE6327HTSA1