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The BC858A RFG is a PNP bipolar junction transistor manufactured by Taiwan Semiconductor Corporation, housed in an SOT-23 surface-mount package. It features a maximum collector-emitter voltage of 30V and a continuous collector current rating of 100mA. The device supports a power dissipation of 250mW at 25°C ambient temperature. Its DC current gain (hFE) ranges from 125 to 250, with a transition frequency of 100MHz. Operating temperatures span from -55°C to +150°C.
Verify the manufacturer marking and lot code against official Taiwan Semiconductor documentation to confirm authenticity. Ensure the suffix RFG corresponds to the specific reel or tape configuration required for your production line. Cross-reference the hFE binning specifications with your circuit design requirements before finalizing procurement orders.
Select this component when a PNP transistor with moderate gain and 30V breakdown is required in a compact SOT-23 footprint. The A-grade hFE range suits applications needing predictable linear performance without excessive gain variability. Consider thermal management if operating near the upper limits of the 250mW dissipation rating.
This part belongs to the BC85x series of PNP transistors, which are widely used as complementary pairs to NPN devices like the BC84x series. The BC858 variant specifically targets 30V applications, distinguishing it from higher-voltage counterparts like the BC856 or BC857. It serves as a standard discrete solution for general electronics.
The BC858A variant specifies a DC current gain (hFE) range of 125 to 250.
Yes, the component complies with RoHS directives.