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Product Detailed Parameters
- Description：TRANS PNP 30V 0.1A PG-SOT23
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：125 @ 2mA, 5V
- Power - Max：330 mW
- Frequency - Transition：250MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：PG-SOT23
- Grade：-
- Qualification：-
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Overview
The BC858AE6327HTSA1 is a PNP silicon general-purpose bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is housed in an SOT-23-3 surface-mount package and configured as a single transistor. The device supports a maximum continuous collector current of 100 mA and a peak collector current of 200 mA. Key electrical ratings include a collector-emitter voltage (VCEO) of 45 V, a collector-base voltage (VCBO) of 50 V, and an emitter-base voltage (VEBO) of 5 V. The component features a DC current gain (hFE) range of 420 to 800 and a transition frequency (fT) of 250 MHz. Power dissipation is rated at 330 mW, with an operating temperature range from -65 °C to +150 °C.
Feature Summary
- High DC current gain ranging from 420 to 800 for effective signal amplification
- Transition frequency of 250 MHz suitable for audio and general switching applications
- Robust thermal performance with a maximum junction temperature of 150 °C
Applications
- General-purpose signal amplification circuits
- Switching applications in low-power digital logic interfaces
- Audio pre-amplifier stages
Procurement Notes
Verify the specific hFE binning code 'A' corresponds to the required gain range of 420–800 for your design. Confirm the SOT-23-3 footprint compatibility during PCB layout finalization. Check for end-of-life status or alternative sourcing if long-term supply stability is critical for the production timeline.
Selection Notes
Select this component when a high-gain PNP transistor is needed in a compact SOT-23-3 package. It is appropriate for designs requiring moderate voltage handling up to 45 V and currents up to 100 mA. Consider the 250 MHz bandwidth limit for high-speed switching requirements.
Part Context
This part belongs to the BC858 series of PNP silicon transistors from Infineon. It shares the same physical package and basic electrical structure as the BC858CE variant but differs in the DC current gain classification. The 'A' suffix denotes a specific gain bin, offering higher amplification factors compared to lower-bin variants within the same family.
Replacement Considerations
BC858CE6327HTSA1: Verify that the lower gain specification of the CE variant meets the circuit requirements.
FAQ
What is the DC current gain range for the BC858AE6327HTSA1?
The DC current gain (hFE) ranges from 420 to 800.
Is the BC858AE6327HTSA1 available in a through-hole package?
No, it is exclusively available in the SOT-23-3 surface-mount package.
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter voltage (VCEO) is 45 V.
