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The BC858B-QR is a PNP general-purpose bipolar junction transistor manufactured by Nexperia. It is housed in a TO-236AB (SOT23) surface-mount package and is qualified to the AEC-Q101 automotive standard. The device supports a maximum collector-emitter voltage of 30 V and a continuous collector current of 100 mA, with a peak rating of 200 mA. It features a DC current gain range of 220 to 475 at 2 mA and 5 V, and a transition frequency of 100 MHz. Power dissipation is rated at 250 mW, with an operating temperature range from -65 °C to +150 °C.
Verify the specific suffix 'QR' corresponds to the required reel packaging configuration during procurement. Confirm that the AEC-Q101 qualification status meets the specific reliability requirements of the target automotive application. Ensure compatibility with the TO-236AB footprint and thermal management constraints defined in the official datasheet before finalizing component selection.
Select this component when an automotive-qualified PNP transistor is required for low-voltage switching or amplification. The high current gain makes it suitable for driving loads where base current efficiency is critical. Consider the 30 V voltage limit and 250 mW power dissipation capability to ensure operation remains within safe limits under worst-case thermal conditions.
This part belongs to the Nexperia BC8xxxB-Q series of automotive-qualified bipolar transistors. These devices are designed to replace legacy components in modern automotive systems while meeting stringent quality standards. The series includes complementary NPN variants and different voltage ratings to support diverse design needs in vehicle electronics.
Direct substitutes include other AEC-Q101 qualified PNP transistors in the SOT23 package with similar electrical characteristics, such as the BC858B without the Q suffix if automotive qualification is not strictly required, or equivalent parts from other manufacturers like ON Semiconductor or STMicroelectronics that match the pinout and specifications.