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The BC858BLT1 is a PNP silicon general-purpose transistor from the onsemi BC856ALT1G series, housed in an SOT-23 (TO-236) surface-mount package. It features a collector-emitter voltage of -30 V and a continuous collector current of -100 mA. The device offers a DC current gain range of 150 to 475 at a collector current of -2.0 mA and -5.0 V. Thermal characteristics include a total device dissipation of 225 mW on an FR-5 board and a junction-to-ambient thermal resistance of 556 °C/W.
Verify the specific ordering suffix matches the required binning and packaging configuration. Confirm that the AEC-Q101 qualification and PPAP capability are necessary for the intended application environment. Ensure the SOT-23 package dimensions align with the printed circuit board layout requirements before finalizing procurement.
Select this component when a PNP transistor with a -30 V collector-emitter breakdown voltage is required. The BC858 variant provides lower voltage tolerance compared to the BC856 or BC857 series members. Consider the hFE binning options if specific gain ranges are critical for the circuit design. Verify compatibility with the desired manufacturing process for the SOT-23 footprint.
This device belongs to the BC856ALT1G series, which includes complementary NPN devices such as the BC846, BC847, BC848, and BC849. The series is designed for low-voltage, low-power switching and amplification tasks. The BC858 specifically denotes the -30 V rating within this family, distinguishing it from higher voltage variants like the BC856 (-65 V) and BC857 (-45 V).
Direct substitutes within the same series include BC858ALT1G and BC858CLT1G, which share the SOT-23 package but differ in DC current gain binning. Cross-manufacturer equivalents must be verified for pinout compatibility and electrical parameter alignment.