BC858BMTF

$0.17

Description：TRANS PNP 30V 0.1A SOT-23-3
Series：-

SKU:f3c960c44315 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS PNP 30V 0.1A SOT-23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：PNP
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：30 V
Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)：15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
Power - Max：310 mW
Frequency - Transition：150MHz
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SOT-23-3
Grade：-
Qualification：-

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BC858BMTF

Overview

The BC858BMTF is a PNP epitaxial silicon transistor manufactured by onsemi, housed in an SOT-23 surface-mount package. It features a collector-emitter voltage of -30 V and a continuous collector current rating of -100 mA. The device has a maximum power dissipation of 310 mW at 25°C ambient temperature and supports junction temperatures up to 150°C. The 'B' suffix indicates a DC current gain (hFE) classification range of 200 to 450 when tested at VCE = -5V and IC = -2mA. The 'MTF' suffix denotes a matte lead finish and tape-and-reel packaging.

Feature Summary

Designed for general-purpose switching and amplifier applications
Suitable for automatic insertion in thick and thin-film circuits
Complements the NPN BC846 through BC850 series

Applications

General-purpose amplification circuits
Digital logic level shifting
Switching applications in consumer electronics

Procurement Notes

Verify the datasheet revision status and ordering information directly from the official onsemi website or authorized distributors. Confirm that the specific part number matches the required hFE binning and packaging format. Ensure compliance with RoHS directives and check for any recent Fairchild Semiconductor integration updates regarding part nomenclature changes.

Selection Notes

Select this component when a low-voltage PNP transistor with moderate current handling is required. The B-grade hFE binning provides a predictable gain range for biasing stability. Consider the SOT-23 footprint constraints and thermal dissipation limits relative to the application's duty cycle and ambient temperature conditions.

Part Context

This component belongs to the BC856-BC860 family of PNP epitaxial silicon transistors originally developed by Fairchild Semiconductor and now managed by onsemi. The family offers various voltage ratings and gain classifications within the same SOT-23 package to support diverse design requirements across different product lines.

Replacement Considerations

Compatible substitutes include other BC858 variants with matching hFE bins, such as BC858B from different manufacturers, provided they meet the -30V VCEO and -100mA IC specifications. Verify pinout compatibility and thermal characteristics before substitution.

FAQ

What does the 'B' suffix indicate in the BC858BMTF part number?

The 'B' suffix specifies the DC current gain (hFE) classification, which ranges from 200 to 450 under standard test conditions.

Is the BC858BMTF suitable for high-frequency RF applications?

No, it is designed for general-purpose switching and audio-frequency amplification. Its transition frequency is limited compared to dedicated RF transistors.