ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS PNP 30V 0.1A SC70-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：220 @ 2mA, 5V
- Power - Max：150 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SC-70-3 (SOT323)
- Grade：-
- Qualification：-
Download product information
Overview
The BC858BWT1 is a PNP silicon general-purpose transistor from onsemi, housed in the SC-70/SOT-323 package. It features a collector-emitter voltage of -30 V and a continuous collector current of -100 mA. The device has a maximum power dissipation of 150 mW and operates within a junction temperature range of -55°C to +150°C. Electrical characteristics include a DC current gain (hFE) ranging from 140 to 400 at specific test conditions, a transition frequency (fT) of 100 MHz, and an output capacitance of 4.5 pF.
Feature Summary
- Designed for low-power surface mount applications using the compact SC-70/SOT-323 housing.
- Suitable for general-purpose amplifier circuits requiring PNP bipolar junction transistors.
- Available in lead-free packages compliant with environmental directives.
Applications
- General purpose amplifier applications
- Low power surface mount circuit designs
Procurement Notes
Verify the exact ordering suffix against the manufacturer's official documentation to confirm package type and compliance status. Confirm that the component matches the specified SC-70/SOT-323 form factor and electrical ratings required for the target design. Ensure compatibility with the intended thermal management strategy given the 150 mW dissipation limit.
Selection Notes
Select this component when a PNP transistor with a -30 V collector-emitter rating and -100 mA current capacity is required. The SOT-323 package is appropriate for space-constrained PCB layouts. Verify that the hFE range meets the specific gain requirements of the amplifier stage. Consider the thermal resistance characteristics if operating near maximum temperature limits.
Part Context
This part belongs to the BC856/BC857/BC858 series of general-purpose PNP transistors manufactured by onsemi. These devices are designed as complementary pairs to NPN counterparts like the BC848 series. The 'WT1' suffix indicates the specific tape and reel packaging configuration for automated assembly processes.
Replacement Considerations
Compatible substitutes include BC858BWT1G and BC858B from other manufacturers such as NXP or LRC, provided they match the SOT-323 package and electrical specifications.
