BC858W,135

Overview

The BC858W,135 is a PNP general-purpose transistor manufactured by Nexperia USA Inc. It operates with a collector-emitter voltage of -30 V and a maximum DC collector current of -100 mA. The device features a DC current gain (hFE) ranging from 125 to 800 at VCE = -5 V and IC = -2 mA. It is housed in an SOT323 (SC-70) surface-mount package with three leads. Key electrical limits include a collector-base breakdown voltage of -30 V and a total power dissipation of 200 mW at 25 °C ambient temperature.

Feature Summary

• Low current capability suitable for small signal applications
• Low voltage operation designed for general-purpose switching
• Compact SOT323 plastic surface-mounted package

Applications

• General-purpose switching
• Amplification circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel size or tape width. Confirm that the component status remains active and matches the required RoHS compliance standards for your manufacturing process before finalizing procurement orders.

Selection Notes

Select this component when a low-voltage PNP transistor is required within a compact SMD footprint. Ensure the circuit design accommodates the -30 V collector-emitter breakdown limit. Verify that the required current gain falls within the specified 125 to 800 range for the intended operating conditions.

Part Context

This part belongs to the BC856W/BC857W/BC858W family of PNP general-purpose transistors. It shares the same SOT323 package and physical dimensions as its counterparts but differs in voltage ratings and gain specifications. The BC848W serves as the NPN complement within this product family.

Replacement Considerations

BC858W,115

FAQ

What is the pin configuration for the BC858W?

Pin 1 is the Base, Pin 2 is the Emitter, and Pin 3 is the Collector.

What is the maximum collector-emitter voltage for the BC858W?

The maximum collector-emitter voltage (VCEO) is -30 V.