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Product Detailed Parameters
- Description：TRANS PNP 30V 0.1A SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：220 @ 2mA, 5V
- Power - Max：300 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
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Overview
The BC859BLT1G is a PNP silicon general-purpose transistor from the BC856ALT1G series, housed in an SOT-23 (TO-236) package. It features a collector-emitter voltage of -30 V and a continuous collector current of -100 mA dc. The device offers a DC current gain range of 150 to 475 at a collector current of -2.0 mA. Electrical characteristics include a base-emitter saturation voltage of -0.9 V max at -100 mA collector current and a transition frequency of 100 MHz. Thermal resistance junction-to-ambient is 556 °C/W on an FR-5 board.
Feature Summary
- PNP silicon construction for general-purpose switching and amplification
- Lead-free, halogen-free, and RoHS compliant manufacturing
- Automotive qualification available with S and NSV prefixes
Applications
- General-purpose amplification circuits
- Switching applications requiring low power drive
- Automotive electronics utilizing AEC-Q101 qualified variants
Procurement Notes
Verify the specific ordering suffix to confirm package type and reel quantity. Confirm whether the 'S' or 'NSV' prefix is required for automotive PPAP capabilities. Ensure the datasheet revision matches the procurement specification. Check marking codes against the official ordering information table to validate device identity upon receipt.
Selection Notes
Select this component when a PNP transistor with a -30 V collector-emitter rating is required. The BC859B variant provides a guaranteed hFE range of 150 to 475, suitable for moderate gain applications. Consider the SOT-23 package constraints for thermal dissipation and physical space. Compare against BC856 and BC857 models if higher voltage ratings or different gain bands are necessary for the circuit design.
Part Context
This part belongs to the BC856ALT1G series of general-purpose PNP transistors manufactured by onsemi. The series includes multiple gain band options (A, B, C) and voltage ratings across BC856, BC857, and BC856 models. The BC859 specifically denotes the -30 V rating within this family. These devices are designed for surface-mount assembly in compact electronic designs.
Replacement Considerations
Direct substitutes within the same series include BC859CLT1G for higher gain requirements. Cross-series replacements like BC559 may be considered for through-hole compatibility if pinouts align. Verify that any replacement maintains the -30 V VCEO rating and compatible SOT-23 footprint.
