BC859BLT3

BC859BLT3

$0.03
  • Description:TRANS PNP 30V 0.1A SOT23-3
  • Series:-

SKU:042302ead7c9 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PNP 30V 0.1A SOT23-3
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):30 V
  • Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
  • Power - Max:300 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3 (TO-236)
  • Grade:-
  • Qualification:-

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BC859BLT3

Overview

The BC859BLT3 is a PNP small-signal bipolar junction transistor manufactured by onsemi. It utilizes the Treo platform's BCD 65nm technology for robust performance. The device features a single PNP configuration in an SOT-323 surface-mount package with three pins. It supports a maximum collector-emitter voltage of -30V and a continuous collector current of -100mA. The unit operates within a temperature range of -55°C to +150°C, ensuring reliability in standard electronic applications.

Feature Summary

  • Utilizes onsemi's Treo analog and mixed-signal platform based on BCD 65nm node technology for enhanced process stability.
  • Provides reliable switching and amplification capabilities through a compact SOT-323 surface-mount package design.
  • Engineered for high thermal stability with an extended operating temperature range suitable for diverse industrial environments.

Applications

  • General-purpose signal switching circuits
  • Low-noise amplifier stages
  • Interface logic level translation

Procurement Notes

Verify the specific suffix 'BLT3' against official onsemi documentation to confirm tape-and-reel packaging specifications and binning requirements. Ensure the component matches the exact electrical characteristics defined in the datasheet, particularly regarding hFE grouping and leakage currents, before finalizing procurement orders.

Selection Notes

Select this component when a compact PNP transistor is required for space-constrained designs utilizing the SOT-323 footprint. Consider its compatibility with the Treo platform manufacturing processes if long-term supply stability is a priority. Evaluate the -30V voltage rating and -100mA current limits against circuit demands to ensure adequate headroom.

Part Context

This part belongs to onsemi's standard product portfolio, which includes general-purpose semiconductors designed for industrial, automotive, and consumer electronics. The Treo platform underpins many of these devices, offering scalable architecture and proven IP blocks to accelerate time-to-market while maintaining consistent quality standards across production batches.

Replacement Considerations

Consult official cross-reference guides for verified substitutes. Generic equivalents may differ in hFE bins or thermal resistance. Verify pinout compatibility and electrical limits before substitution to prevent circuit malfunction.

FAQ

What is the maximum collector-emitter voltage for the BC859BLT3?

The maximum collector-emitter voltage (VCEO) is -30V.

Which manufacturing platform supports the BC859BLT3?

It is built using onsemi's Treo platform based on BCD 65nm node technology.

What is the operating temperature range of this transistor?

The device operates reliably from -55°C to +150°C.

BC859BLT3BC859BLT3
$0.03
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