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The BC859BLT3 is a PNP small-signal bipolar junction transistor manufactured by onsemi. It utilizes the Treo platform's BCD 65nm technology for robust performance. The device features a single PNP configuration in an SOT-323 surface-mount package with three pins. It supports a maximum collector-emitter voltage of -30V and a continuous collector current of -100mA. The unit operates within a temperature range of -55°C to +150°C, ensuring reliability in standard electronic applications.
Verify the specific suffix 'BLT3' against official onsemi documentation to confirm tape-and-reel packaging specifications and binning requirements. Ensure the component matches the exact electrical characteristics defined in the datasheet, particularly regarding hFE grouping and leakage currents, before finalizing procurement orders.
Select this component when a compact PNP transistor is required for space-constrained designs utilizing the SOT-323 footprint. Consider its compatibility with the Treo platform manufacturing processes if long-term supply stability is a priority. Evaluate the -30V voltage rating and -100mA current limits against circuit demands to ensure adequate headroom.
This part belongs to onsemi's standard product portfolio, which includes general-purpose semiconductors designed for industrial, automotive, and consumer electronics. The Treo platform underpins many of these devices, offering scalable architecture and proven IP blocks to accelerate time-to-market while maintaining consistent quality standards across production batches.
Consult official cross-reference guides for verified substitutes. Generic equivalents may differ in hFE bins or thermal resistance. Verify pinout compatibility and electrical limits before substitution to prevent circuit malfunction.
The maximum collector-emitter voltage (VCEO) is -30V.
It is built using onsemi's Treo platform based on BCD 65nm node technology.
The device operates reliably from -55°C to +150°C.