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The BC859CW,115 is a single PNP bipolar junction transistor manufactured by Nexperia. It utilizes silicon technology and is housed in an SC-70 (SOT-323) surface-mount package with three terminals. Key electrical ratings include a maximum collector current of 100 mA, a collector-emitter voltage of 30 V, and a collector-base voltage of 30 V. The device features a minimum DC current gain of 420 at 2 mA and 5 V, with a transition frequency of 100 MHz. Power dissipation is rated at 200 mW, and it operates within a temperature range of -65 °C to +150 °C.
Verify the specific ordering suffix against official Nexperia documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with standard SMD assembly processes. Confirm RoHS compliance status through the manufacturer's latest datasheet before finalizing procurement decisions.
Select this component for low-voltage applications requiring a compact PNP transistor. The 30 V rating suits logic-level interfaces. Compare the 100 mA current limit and 200 mW power dissipation against circuit load requirements to ensure safe operating area margins are maintained during continuous operation.
This part belongs to the BC859 series of small-signal PNP transistors designed for portable electronics. It serves as the complement to NPN counterparts like the BC849. The SC-70 packaging allows for high-density PCB layouts, making it suitable for modern consumer devices where board real estate is limited.
Direct substitutes include other BC859 variants with compatible pinouts and electrical characteristics. Verify that alternative parts meet the same 30 V voltage and 100 mA current specifications.