SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BC869-25,115 is a PNP medium power transistor manufactured by Nexperia USA Inc. It operates with a maximum collector-emitter voltage of 40V and supports a continuous collector current of 1A. The device features a high power dissipation capability of 500mW at 25°C ambient temperature. It is housed in a compact SOT89 (SC-62) surface-mount plastic package designed for efficient thermal performance. This component is qualified to the AEC-Q101 standard, ensuring reliability for automotive applications.
Verify the specific suffix
Select this component when a PNP medium-power transistor with AEC-Q101 qualification is required. The SOT89 package offers a balance between power handling and board space. Ensure the design accounts for the 40V Vceo limit and 1A Ic rating under expected thermal conditions. Compare against other BC869 variants if different gain ranges or voltage ratings are needed.
This part belongs to the BC869 series of NPN/PNP complementary medium power transistors. These devices are widely used in general-purpose amplification and switching applications. The BC869-25 variant specifically denotes a particular DC current gain range within the family, distinguishing it from other gain bins like the BC869-7 or BC869-40.
BC869-25,115
The maximum collector-emitter voltage (Vceo) is 40V.
Yes, it is qualified to the AEC-Q101 standard.
It uses the SOT89 (SC-62) surface-mount plastic package.