BCF080T

Overview

The BeRex BCF080T is a GaAs Power MESFET chip featuring a 0.3 µm gate length and 800 µm gate width, designed for high OIP3 linearity and low phase noise from DC to 26.5 GHz. It delivers typical output power of 26.0 dBm at 12 GHz with 11.0 dB gain. The device utilizes SI 3N4 passivation for reliability and supports Eutectic Au-Sn die attach. Maximum ratings include a drain-source voltage of 12 V and total power dissipation of 2.3 W.

Feature Summary

• High linearity and low phase noise performance suitable for wideband or narrow-band applications
• SI 3N4 passivation technology for increased device reliability
• Optimized for high-gain and medium power operation across the frequency range

Applications

• Commercial RF systems
• Military and Hi-Rel applications
• Test & Measurement equipment

Procurement Notes

Verify component authenticity through authorized BeRex channels. Confirm datasheet revision status prior to design integration. Ensure handling protocols strictly follow ESD precautions due to GaAs sensitivity. Validate die attach specifications against assembly capabilities. Review hazardous material disposal requirements for Gallium Arsenide compliance.

Selection Notes

Evaluate thermal resistance of 61 °C/W when designing heat dissipation paths. Select appropriate bonding wire dimensions (400 µm gate, 350 µm drain) for RF matching networks. Consider operating conditions within absolute maximum ratings to prevent permanent damage. Assess suitability for specific frequency bands based on gain and PAE characteristics.

Part Context

This component is a bare die semiconductor device intended for integration into custom RF modules or subsystems. It requires specialized surface mount or flip-chip assembly techniques rather than standard leaded packages. Designers must account for external biasing networks and impedance matching circuits to realize specified performance metrics.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Direct replacement requires identical GaAs MESFET specifications and pinout compatibility.

FAQ

What is the recommended die attach method?

BeRex recommends Eutectic die attach using Au-Sn (80%-20%) pre-forms with temperature control below 300°C for less than 60 seconds.

How should the device be handled to prevent damage?

Proper ESD precautions are critical. All work surfaces, assembly equipment, and operators must be grounded. Assembly should occur in a Class 10,000 or better clean room environment.

What are the maximum continuous ratings?

Maximum continuous ratings include a Drain-Source Voltage of 12 V, Gate-Source Voltage of -8 V, and Total Power Dissipation of 2.3 W.