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The BeRex BCF120T is a GaAs Power MESFET chip featuring a nominal 0.3 micron gate length and 1200 micron gate width, designed for high OIP3 linearity and low phase noise from DC to 26.5 GHz. At 12 GHz with Vds=8V, it delivers 28.0 dBm output power, 11.0 dB gain, and 31% PAE. At 18 GHz under identical bias, performance includes 27.9 dBm output power, 9.3 dB gain, and 32% PAE. The device utilizes SI 3N4 passivation for reliability and supports through-hole or surface mount integration.
Verify the current revision status of the datasheet before finalizing designs, as specifications are subject to change without notice. Confirm that the procurement channel provides antistatic Gel-Pak packaging within sealed moisture barrier bags to prevent ESD damage during transit. Ensure handling protocols strictly follow clean room requirements to avoid contamination of exposed GaAs devices.
Select this component when high OIP3 linearity and low phase noise are critical requirements across the DC to 26.5 GHz range. Evaluate thermal management capabilities carefully, as the maximum continuous drain-source voltage is limited to 12V and total power dissipation ranges from 2.8W to 3.3W depending on operating conditions. Ensure circuit design accommodates the specific gate-source and drain-gate breakdown voltages to prevent permanent damage.
This part belongs to the BeRex GaAs Power MESFET family, characterized by recessed gate technology optimized for medium power and high-gain performance. It serves as a discrete semiconductor solution for RF front-end stages in communication and radar systems where linear amplification is prioritized over raw efficiency.
No public confirmed substitute part numbers are documented in the official datasheet.