BCF240T

Overview

The BeRex BCF240T is a Gallium Arsenide (GaAs) Power MESFET chip featuring a nominal 0.3 micron gate length and 2400 micron gate width. Designed for high OIP3 linearity and low phase noise, it delivers medium power from DC to 26.5 GHz. At 12 GHz with Vds=8V, typical output power is 30.4 dBm, gain is 9.8 dB, and PAE is 26.7%. At 18 GHz under the same conditions, output power is 30.1 dBm, gain is 7.7 dB, and PAE is 25.5%. The device utilizes SI 3N4 passivation for reliability and requires Au-Sn eutectic die attach.

Feature Summary

• High efficiency heterojunction power FET optimized for wideband or narrow-band applications
• SI 3N4 passivation technology ensures increased device reliability
• Screened devices from each wafer to guarantee performance consistency

Applications

• Commercial RF systems
• Military and Hi-Rel equipment
• Test & Measurement instrumentation

Procurement Notes

Verify component authenticity through authorized BeRex channels. Confirm datasheet revision matches current requirements. Ensure handling procedures strictly follow ESD precautions due to GaAs sensitivity. Validate die attach specifications against assembly capabilities. Review hazardous material disposal guidelines for GaAs compliance.

Selection Notes

Evaluate thermal resistance of 23 °C/W when designing heat dissipation paths. Select appropriate wire bonding dimensions: 400 um gate wires, 350 um drain wires, and 200 um source wires. Consider operating voltage limits of 12V max for Vds and -8V max for Vgs. Assess input power limits relative to compression points.

Part Context

This component belongs to the BeRex GaAs Power MESFET family. It is specifically engineered for high-frequency applications requiring linear amplification. The 0.3 x 2400 micron recessed gate structure differentiates it from standard planar FETs by optimizing power density and linearity characteristics.

Replacement Considerations

No public confirmed substitute part numbers are documented in the official datasheet. Direct replacement requires matching GaAs MESFET topology, gate dimensions, and electrical ratings. Verify pinout compatibility if integrating into existing layouts.

FAQ

What is the recommended die attach method?

BeRex recommends using 'Eutectic' die attach with Au-Sn (80%-20%) pre-forms. The operation should be performed at temperatures no hotter than 300°C for less than 60 seconds using inert forming gas or clean, dry nitrogen.

How many bonding wires are required for the source connection?

Ten gold bonding wires are required for the source to ground plate connection. Each wire should have a diameter of 1 mil, with a length of 200 um and height of 250 um.

What are the absolute maximum ratings for Drain-Source Voltage?

The absolute continuous maximum rating for Drain-Source Voltage (Vds) is 12 V. Exceeding this limit may result in reduced MTTF or permanent damage.