BCG004

Overview

The BeRex BCG004 is a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) die featuring a 0.15 µm gate length and 960 µm gate width, designed for high-gain and high-power amplifier applications from DC to 26 GHz. At 12 GHz with Vds = 28V and Id = 40mA, it delivers a typical saturated output power of 36.5 dBm, gain of 10.5 dB, and Power Added Efficiency (PAE) of 55%. The device supports a maximum drain-source voltage of 90 V, drain current of 1.2 A, and total power dissipation of 7.5 W. It utilizes SI3N4 passivation and offers thermal resistance of 5.8 °C/W.

Feature Summary

• SI3N4 passivation and state-of-the-art metallization for reliability
• Suitable for wideband or narrowband amplifier applications
• Screened for commercial and military/Hi-Rel environments

Applications

• Amplifier applications requiring high gain and power
• Wideband systems operating up to 26 GHz
• Narrowband RF circuits
• Test & Measurement equipment
• Commercial and Military / Hi-Rel electronics

Procurement Notes

Verify the specific revision level against the latest official datasheet before procurement. Confirm that the ordering suffix matches the required commercial or military/Hi-Rel screening specifications. Ensure handling protocols strictly follow ESD precautions due to GaN sensitivity. Validate that the supplier provides appropriate antistatic Gel-Pak packaging in sealed metallized bags.

Selection Notes

Select the BCG004 for designs requiring high power density and efficiency in the microwave range. Verify bias conditions align with the 28V drain voltage and 40mA quiescent current for optimal performance. Consider the 5.8 °C/W thermal resistance for heat dissipation requirements. Ensure the application environment meets the -60°C to 150°C storage temperature limits.

Part Context

The BCG004 belongs to BeRex's portfolio of GaN Power HEMT dies. It is engineered for robust performance in demanding RF environments. The product line includes options for both commercial and military/Hi-Rel grades, catering to diverse industry standards. BeRex emphasizes reliability through advanced passivation techniques and rigorous screening processes.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Evaluate alternative GaN HEMTs based on matching gate dimensions (0.15µm x 960µm), breakdown voltages, and thermal characteristics if substitution is necessary.

FAQ

What is the recommended wire bonding configuration for the BCG004?

Use 1 mil diameter Au wires: 1 wire for Gate (900 μm x 250 μm), 2 wires for Drain (400 μm x 250 μm), and 4 wires for Source (250 μm x 300 μm). Maintain bonding temperature below 280°C for no more than 2 minutes.

How should the BCG004 be attached to the substrate?

BeRex recommends eutectic die attach using Au/Sn (80/20) pre-forms at temperatures no hotter than 300°C for less than 10 seconds in an inert forming gas or clean dry N2 environment.

Is the BCG004 authorized for use in life support devices?

No. BeRex products are not authorized for use as critical components in life support devices without express written approval from BeRex.