BCP020C-70

BCP020C-70

$12.15
  • Description:RF MOSFET PHEMT FET 6V 4MICROX
  • Series:-

SKU:3a8d2eb5a652 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET PHEMT FET 6V 4MICROX
  • Series:-
  • Mfr:BeRex Inc
  • Package:Tape & Reel (TR)
  • Technology:pHEMT FET
  • Frequency:1GHz ~ 26GHz
  • Gain:13.5dB
  • Voltage - Test:6 V
  • Current Rating (Amps):80mA
  • Noise Figure:-
  • Current - Test:40 mA
  • Power - Output:21.5dBm
  • Voltage - Rated:12 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:4-Micro-X
  • Supplier Device Package:4-Micro-X
  • Configuration:-

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BCP020C-70

Overview

The BeRex BCP020C-70 is a GaAs Power pHEMT featuring a 0.25µm by 200µm recessed gate architecture, designed for high efficiency across 1000 MHz to 26 GHz. It utilizes a 70 mil ceramic Micro-X surface-mount package. At 12 GHz with Vds = 6V and Ids = 50% Idss, typical P1dB is 21.5 dBm (power tuned) or 19.0 dBm (gain tuned), with corresponding gains of 12 dB and 13.5 dB. PAE reaches 60% at 12 GHz (power tuned). The device supports a maximum drain-source voltage of 12 V and total power dissipation up to 295 mW.

Feature Summary

  • Utilizes a 0.25µm by 200µm recessed gate architecture for low noise and high gain.
  • Housed in a 70 mil surface-mountable ceramic Micro-X package with low parasitics.
  • Provides excellent power-added efficiency over a broad frequency range from 1000 MHz to 26 GHz.

Applications

  • Commercial RF systems
  • Military and Hi-Rel applications
  • Test & Measurement equipment

Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before finalizing designs. Confirm that the intended application does not involve life support devices without explicit written approval from BeRex. Ensure thermal management meets the specified Rth of 460 °C/W to maintain channel temperature within absolute maximum ratings during operation.

Selection Notes

Select this component when designing circuits requiring high efficiency and gain in the microwave frequency range up to 26 GHz. Consider the 70 mil ceramic Micro-X package for surface-mount integration. Evaluate tuning requirements based on whether power output or gain is the primary design objective, as performance metrics vary between power-tuned and gain-tuned configurations.

Part Context

This part belongs to the BeRex BCP0 series of GaAs Power pHEMTs. The series is characterized by its use of advanced semiconductor processes to deliver robust performance in high-frequency applications. The BCP020C-70 specifically targets markets demanding reliable RF amplification in compact form factors.

Replacement Considerations

No public confirmed substitute part numbers are documented in the provided datasheet. Designers should consult BeRex directly for potential cross-references or updated product line replacements.

FAQ

What is the maximum drain-source voltage rating?

The absolute continuous maximum Drain-Source Voltage (Vds) is rated at 12 V.

How does the package type affect installation?

The device is housed in a 70 mil ceramic Micro-X package, which is designed for surface-mountable installation.

What is the typical Power Added Efficiency at 12 GHz?

When tuned for power at 12 GHz with Vds = 6V and Ids = 50% Idss, the typical PAE is 60%.

BCP020C-70BCP020C-70
$12.15
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