BCP120C

BCP120C

$36.86
  • Description:RF MOSFET PHEMT FET 8V DIE
  • Series:-

SKU:e167bdec8777 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET PHEMT FET 8V DIE
  • Series:-
  • Mfr:BeRex Inc
  • Package:Tray
  • Technology:pHEMT FET
  • Frequency:6GHz ~ 18GHz
  • Gain:11dB
  • Voltage - Test:8 V
  • Current Rating (Amps):500mA
  • Noise Figure:-
  • Current - Test:180 mA
  • Power - Output:30.5dBm
  • Voltage - Rated:12 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:Die
  • Supplier Device Package:Die
  • Configuration:-

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BCP120C

Overview

The BeRex BCP120C is a GaAs Power pHEMT featuring a 0.25µm x 1200µm recessed gate, designed for high-gain and medium-power applications from DC to 26.5 GHz. At 12 GHz with Vds=8V and Id=180mA, it delivers typical P1dB of 30.5 dBm, gain of 11 dB, and PAE of 60%. At 18 GHz under identical conditions, P1dB is 29.5 dBm, gain is 8.0 dB, and PAE is 45%. The device supports wideband (6-18 GHz) or narrow-band use, utilizing SI3N4 passivation and Au-Sn eutectic die attach for thermal management.

Feature Summary

  • High-efficiency heterojunction power FET chip architecture
  • Suitable for wideband and narrow-band RF applications
  • State-of-the-art metallization with Si3N4 passivation

Applications

  • Commercial RF systems
  • Military and Hi-Rel applications
  • Test and Measurement equipment

Procurement Notes

Verify the specific revision number against the latest BeRex datasheet before procurement, as specifications are subject to change without notice. Confirm that the received components match the BCP120C designation exactly. Ensure handling procedures adhere to ESD precautions due to GaAs sensitivity. Check for proper antistatic Gel-Pak packaging upon receipt to prevent mechanical or electrostatic damage during storage and assembly.

Selection Notes

Select the BCP120C when high gain and medium output power are required across the DC to 26.5 GHz range. It is optimized for tuned power operation at 12 GHz and 18 GHz. Consider the 0.25µm x 1200µm gate size for performance scaling. Evaluate thermal resistance requirements, noting the specified 37°C/W for Au-Sn eutectic attachment. Ensure biasing circuits support the recommended Vds of 8V and Id of 180mA for optimal P1dB and PAE performance.

Part Context

The BCP120C belongs to the BeRex BCP series of high-efficiency heterojunction power FET chips. This family includes variants such as BCP020T, BCP030T, and BCP060C, all sharing similar GaAs pHEMT technology. The BCP120C specifically targets higher power density applications compared to lower-current counterparts in the same product line, maintaining compatibility with standard wire bonding and die attach processes used for the series.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult BeRex directly for qualified alternatives or cross-reference within the BCP series based on specific power and frequency requirements.

BCP120CBCP120C
$36.86
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