BCP240C

Overview

The BeRex BCP240C is a GaAs Power pHEMT chip featuring a 0.25 µm by 2400 µm recessed gate, designed for high-gain and medium-power applications from DC to 26.5 GHz. It delivers typical output power of 33 dBm at 12 GHz with 9 dB gain. The device operates at Vds = 8V and Id = 360mA, providing 55% PAE at 12 GHz and 35% at 18 GHz. Saturated drain current ranges from 530 mA to 1030 mA. Thermal resistance is 20 °C/W using Au-Sn eutectic attachment. Maximum ratings include 12V drain-source voltage and 175°C channel temperature.

Feature Summary

• Utilizes state-of-the-art metallization with SI3N4 passivation for enhanced reliability
• Suitable for both wideband (6-18 GHz) and narrow-band RF applications
• Screened to assure long-term operational stability in demanding environments

Applications

• Commercial RF systems
• Military and High-Reliability equipment
• Test & Measurement instrumentation

Procurement Notes

Verify the specific revision status against the October 2018 datasheet before procurement. Confirm that the supplier provides antistatic Gel-Pak packaging with moisture barrier bags as specified. Ensure handling protocols meet Class 10,000 clean room standards to prevent contamination during die assembly operations.

Selection Notes

Select this component when designing circuits requiring high gain and medium power up to 26.5 GHz. Consider the 20 °C/W thermal resistance for heat dissipation planning. Verify compatibility with 1 mil diameter gold bonding wires for gate, drain, and source connections according to the provided wire bonding specifications.

Part Context

The BCP240C belongs to the BCP series of GaAs Power pHEMT chips manufactured by BeRex, Inc. These devices are engineered for microwave frequencies and utilize a 0.25-micron process technology. The product line targets applications needing robust performance across broad bandwidths while maintaining high efficiency.

Replacement Considerations

No public substitute part numbers are documented in the official datasheet. Evaluate alternative GaAs pHEMTs based on matching gate dimensions, frequency range, and thermal characteristics if sourcing becomes unavailable.

FAQ

What is the recommended die attach method?

BeRex recommends Eutectic die attach using Au-Sn (80%-20%) pre-forms, performed at temperatures no hotter than 300°C for less than 60 seconds.

How many source ground wires are required?

Four 250 µm x 300 µm gold bonding wires should be used to connect the source to the ground plate.

What is the maximum continuous drain-source voltage?

The absolute maximum continuous Drain-Source Voltage (Vds) rating is 12V.