SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BCP51-10TF is a PNP medium power transistor from the Nexperia BCP51T series, housed in an SOT223 (SC-73) surface-mounted package. It supports a collector current of -1 A and peak currents up to -2 A. The device features a collector-emitter voltage rating of -45 V and a collector-base voltage of -45 V. DC current gain ranges from 63 to 160 at -150 mA. Total power dissipation reaches 1.8 W on a standard FR4 PCB. Transition frequency is typically 140 MHz.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact current gain binning and packaging configuration. Ensure the component matches the required automotive qualification standards if deployed in vehicle systems. Cross-reference the datasheet revision date to validate all electrical parameters before finalizing design specifications.
Select this component when designing circuits requiring a PNP medium power transistor with high current handling capabilities. The SOT223 package provides improved thermal performance compared to smaller signal packages. Consider the specific hFE binning requirements for your application, as the -10 variant offers a defined gain range suitable for consistent switching or amplification performance.
This part belongs to the BCP51T series, which includes complementary NPN devices like the BCP54T. The series is designed for general-purpose medium power applications. The TF suffix indicates a specific tape-and-reel packaging format intended for automated surface-mount assembly processes.
BCP51T
The device supports a peak collector current of -2 A for single pulses with a duration of 1 ms or less.
Yes, the product has been qualified in accordance with the AEC-Q101 standard for discrete semiconductors.
The DC current gain varies with junction temperature, with typical curves provided for -55 °C, 25 °C, and 100 °C in the characteristics section.