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The BCP5110TA is a PNP medium power transistor manufactured by Diodes Incorporated, housed in an SOT223 surface-mount package. It features a collector-emitter breakdown voltage of -45V and supports a continuous collector current of -1A with a peak pulse current of -2A. The device provides a maximum power dissipation of 2W and offers low saturation voltage characteristics. Gain groups are specified as Group 10, ensuring consistent DC current transfer ratio performance across operating conditions.
Verify the specific ordering suffix TA indicates tape and reel packaging containing one thousand units per seven-inch reel. Confirm that the marking code matches the required gain group designation. Ensure compliance requirements align with project specifications regarding RoHS directives and PPAP capabilities for automotive integration.
Select this component when a PNP transistor with -45V collector-emitter voltage rating is required. The -1A continuous current capacity suits moderate power loads. Verify that the SOT223 package dimensions fit the PCB layout constraints. Consider the thermal resistance values for heat dissipation planning under steady-state operating conditions.
This part belongs to the BCP51/52/53 family of PNP medium power transistors. It serves as the complementary counterpart to the NPN BCP54 series. The device is designed for general-purpose amplification and switching tasks where reliable performance in a compact surface-mount form factor is necessary.
Compatible substitutes include BCP51TA and BCP51-10TA from various manufacturers offering identical electrical ratings and SOT223 packaging.