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Product Detailed Parameters
- Description：TRANS PNP 80V 1.5A SOT223
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：1.5 A
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：63 @ 150mA, 2V
- Power - Max：1.5 W
- Frequency - Transition：50MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-261-4, TO-261AA
- Supplier Device Package：SOT-223 (TO-261)
- Grade：-
- Qualification：-
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Overview
The BCP53-10T1G is a PNP silicon epitaxial transistor from onsemi, designed for medium power and high current surface mount applications. It features a maximum collector-emitter voltage of -80 V and a continuous collector current of -1 A. The device operates within a junction temperature range of -65°C to +150°C and offers a minimum DC current gain (hFE) of 63 at specified test conditions. Packaged in a SOT-223 (TO-261AA) housing with four pins, it provides a thermal resistance of 83 K/W junction-to-ambient. The component is RoHS compliant and lead-free.
Feature Summary
- Designed for general-purpose amplifier and switching applications with low saturation voltage.
- Utilizes an SOT-223 surface-mount package optimized for automated assembly processes.
- Constructed using silicon epitaxial technology for robust performance under high current loads.
Applications
- General-purpose amplification circuits
- Power management switching stages
- Audio frequency driver outputs
Procurement Notes
Verify the specific suffix '10' indicates the hFE binning grade required for your circuit design, as this affects gain consistency. Confirm the package variant matches your PCB footprint requirements, specifically the tab connection configuration. Ensure compliance with RoHS directives if applicable to your manufacturing region. Cross-reference the datasheet revision date to ensure parameter accuracy against your design specifications.
Selection Notes
Select this component when a PNP transistor with 80V breakdown and 1A current capability is needed in a compact surface-mount form factor. Consider the thermal resistance limits for your enclosure design. Compare against complementary NPN types like the BCX54 series if push-pull configurations are required. Evaluate the hFE binning to ensure sufficient gain for your specific base drive conditions without excessive base current consumption.
Part Context
This part belongs to the BCP53 family of PNP medium power transistors manufactured by onsemi. The family includes variants such as BCP53T1G and BCP53-16T1G, which differ primarily in current gain binning. These devices are widely used in consumer electronics and industrial control systems where reliable switching and amplification are required in space-constrained designs.
Replacement Considerations
BCP53T1G: Offers similar electrical characteristics but may have different hFE binning. BCP53-16T1G: Provides higher current gain options within the same package and voltage ratings. NSVBCP53MTWG: A newer generation variant in a smaller WDFN package with comparable electrical performance.
