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The BCP53-16T3G is a PNP silicon epitaxial transistor manufactured by onsemi, designed for medium power surface mount applications. It features a maximum collector-emitter voltage of 80 V and a continuous collector current of 1.5 A. The device operates within a junction temperature range of -65 °C to +150 °C and offers a minimum DC current gain (hFE) of 100 at specified test conditions. Packaged in the SOT-223 (TO-261AA) format with four pins, it supports both wave and reflow soldering processes.
Verify the specific datasheet revision when sourcing, as ON Semiconductor documents may vary slightly between revisions. Confirm that the component meets RoHS compliance and lead-free requirements if mandated by your assembly process. Ensure the SOT-223 footprint matches your PCB design, noting the collector connection to the tab for proper thermal and electrical grounding.
Select this component when a PNP transistor with 80V breakdown and 1.5A current handling is required in a surface-mount form factor. It serves as the direct PNP complement to the BCP56 NPN transistor. Consider the SOT-223 package for its ability to dissipate heat through the exposed collector tab while maintaining a compact profile suitable for automated assembly.
This part belongs to the BCP53 family of PNP silicon epitaxial transistors from onsemi. The family is characterized by high current ratings and low saturation voltages, making them suitable for general-purpose amplification and switching tasks. The '16' suffix typically denotes the specific hFE binning or voltage rating variant within the broader product line.
The complementary NPN transistor in the same series is the BCP56.
Yes, the SOT-223 package is designed to withstand both wave and reflow soldering processes without damaging the die.
The collector is electrically connected to the exposed metal tab on the underside of the package, which also aids in heat dissipation.