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The BCP55-10 is an NPN silicon planar medium power transistor manufactured by Diotec Semiconductor. It features a maximum collector current of 1 A and a collector-emitter voltage (VCEO) of 60 V. The device operates within a temperature range of -55°C to +150°C, with a power dissipation rating of 2 W. It utilizes a SOT-223 surface-mount package and offers a minimum DC current gain (hFE) of 63.
Verify the specific suffix '10' against official Diotec documentation to confirm the exact hFE binning or grade. Ensure the ordering part number matches the required electrical tolerance specifications for your design. Confirm RoHS compliance status through the manufacturer's latest datasheet before finalizing procurement.
Select this component when a single NPN transistor is needed for medium-power applications requiring 60 V breakdown and 1 A current capacity. The SOT-223 package is suitable for surface-mount designs where thermal performance and compact footprint are priorities compared to through-hole alternatives like TO-226AA.
This transistor belongs to the BCP55 series of NPN silicon planar transistors designed for general-purpose use. It serves as a medium-power alternative to smaller signal transistors, offering higher current handling capabilities while maintaining compatibility with standard surface-mount assembly processes common in modern electronics manufacturing.
BCP55-16 and BCP55-25 are confirmed substitutes within the same family, differing primarily in DC current gain ranges.