BCP5510TA

Overview

The BCP5510TA is an NPN medium power transistor from the BCP54/55/56 series manufactured by Diodes Incorporated. It operates with a collector-emitter voltage of 60V and supports a continuous collector current of 1A, with a peak pulse current capability of 2A. The device features a low saturation voltage of less than 500mV at 0.5A and belongs to gain group 10. Packaged in SOT223, it dissipates up to 2W of power and functions within a temperature range of -55°C to +150°C.

Feature Summary

• NPN medium power transistor configuration
• Low saturation voltage for efficient switching
• High continuous collector current handling
• Totally lead-free and RoHS compliant

Applications

• Medium power switching applications
• Amplification circuits
• AF driver stages
• Output stages

Procurement Notes

Verify the component marking code on the physical device matches 'BCP 5510' to confirm the specific gain group and model variant. Ensure the package type corresponds to SOT223 and check that the leads are matte tin plated. Confirm compliance with RoHS directives if required for your manufacturing process.

Selection Notes

Select this component when a 60V NPN transistor with 1A continuous current capacity is required. The gain group 10 designation indicates a specific DC current gain range suitable for standard amplification tasks. Consider the thermal resistance characteristics and ensure adequate heat dissipation for the intended power load.

Part Context

This part belongs to the BCP54/55/56 family of NPN medium power transistors. The BCP55 variant specifically offers a 60V collector-emitter breakdown voltage. Complementary PNP types in this family include the BCP51, BCP52, and BCP53 devices.

Replacement Considerations

Direct substitutes within the same family include BCP55TA (standard gain) and BCP5516TA (gain group 16). Verify that any replacement maintains the required voltage, current, and gain specifications.