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The BCP55H6327XTSA1 is a single NPN bipolar junction transistor manufactured by Infineon Technologies. It utilizes silicon technology and is housed in an SMD/SMT SOT-89-4 package. The device features a maximum collector-emitter voltage of 60 V and a continuous collector current rating of 1 A. Key electrical characteristics include a DC current gain (hFE) ranging from 40 to 250, a transition frequency (fT) of 100 MHz, and a power dissipation capacity of 2 W. It operates within a temperature range of -65 °C to +150 °C.
Verify the specific hFE binning requirements against your circuit design needs, as the component offers a wide gain range. Confirm that the SOT-89-4 package dimensions align with your PCB footprint constraints. Ensure that the thermal management strategy supports the 2 W power dissipation limit under expected operating conditions. Cross-reference the datasheet for precise saturation voltage values relevant to your load.
Select this component when a medium-power NPN transistor is required for audio or general-purpose tasks. It is suitable for designs needing high thermal tolerance up to 150 °C. Consider the 1 A current limit and 60 V voltage rating to ensure adequate headroom. The SOT-89-4 package provides a balance between power handling and compact size for surface mount implementations.
This part belongs to the BCX55 series of NPN transistors from Infineon Technologies. It is designed for audio frequency applications and general-purpose use. The H6327 suffix indicates a specific tape and reel packaging format used for automated surface mount production. It serves as a discrete solution for amplification and switching in consumer and industrial electronics.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with generic SOT-89-89 NPN transistors having similar voltage, current, and gain specifications if direct substitution is necessary.