BCP56-10H-QX

BCP56-10H-QX

$0.07
  • Description:BCP56-10H-Q/SOT223/SC-73
  • Series:BCP56H-Q

SKU:14a9f17d5ed0 Category: Brand:

  
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Product Detailed Parameters

  • Description:BCP56-10H-Q/SOT223/SC-73
  • Series:BCP56H-Q
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
  • Power - Max:725 mW
  • Frequency - Transition:155MHz
  • Operating Temperature:175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-261-4, TO-261AA
  • Supplier Device Package:SOT-223
  • Grade:Automotive
  • Qualification:AEC-Q101

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BCP56-10H-QX

Overview

The BCP56-10H-QX is an NPN silicon medium power transistor manufactured by Nexperia. It features a maximum collector-emitter voltage (Vceo) of 80 V and a continuous collector current (Ic) of 2 A. The device operates within a temperature range of -55 °C to +150 °C. It utilizes the DFN2020D-3 leadless surface-mount package, which provides enhanced thermal conductivity through an exposed heatsink pad. The component is qualified under the AEC-Q101 standard for automotive applications.

Feature Summary

  • AEC-Q101 qualified for automotive reliability requirements
  • Leadless DFN2020D-3 package with exposed thermal pad for superior heat dissipation
  • High DC collector current capability of 2 A

Applications

  • Linear voltage regulators
  • High-side switches
  • Battery-driven devices
  • Power management circuits
  • MOSFET drivers

Procurement Notes

Verify the specific suffix 'QX' against the manufacturer's official documentation to confirm the exact reel packaging configuration and tape-and-reel specifications. Ensure that the DFN2020D-3 footprint matches the target PCB design, paying close attention to the thermal pad soldering requirements for optimal performance.

Selection Notes

Select this component when high current switching or amplification is required in space-constrained designs. The leadless package offers a smaller footprint compared to traditional plastic packages while maintaining similar power handling capabilities. Consider the thermal resistance characteristics of the DFN2020D-3 package during layout to ensure adequate heat sinking for sustained operation at high currents.

Part Context

This part belongs to Nexperia's medium power transistor portfolio, designed to replace larger legacy packages in modern electronics. The transition to leadless DFN packages supports the industry trend toward miniaturization and improved thermal efficiency in compact consumer and automotive electronic systems.

Replacement Considerations

Consult official Nexperia substitution guides for verified equivalents. Cross-reference pinouts and thermal characteristics carefully when replacing older SOT packages with this leadless variant.

BCP56-10H-QXBCP56-10H-QX
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