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The BCP5610QTC is an NPN medium power Bipolar Junction Transistor (BJT) manufactured by Diodes Incorporated, designed for automotive applications. It features a collector-emitter voltage (VCEO) of 80 V and a continuous collector current (IC) of 1 A. The device supports a peak pulse collector current (ICM) of 2 A and offers a power dissipation (PD) of 2 W. Electrical characteristics include a transition frequency (fT) ranging from 100 to 150 MHz at IC = 50 mA. It operates within a temperature range of -65°C to +150°C and is housed in a SOT-223 package.
Verify the specific suffix 'TC' indicates the tape and reel packaging configuration containing 4000 units per reel. Confirm that the component carries the Automotive compliance marking and meets PPAP capability requirements. Ensure the ordering part number matches the exact datasheet revision DS41361 Rev. 2-2 to guarantee correct electrical parameters and mechanical dimensions.
Select this component when designing circuits requiring robust NPN transistors for automotive systems. It is suitable for applications demanding high continuous collector current up to 1 A and peak pulse handling up to 2 A. Consider its low saturation voltage for improved efficiency in switching applications. Verify thermal management capabilities given the 2 W power dissipation rating in the SOT-223 package.
This transistor belongs to the BCP56 series of medium power NPN transistors. It is complemented by the PNP type BCP5316Q. The device utilizes a molded plastic case with matte tin plated leads, ensuring solderability per MIL-STD-202 Method 208. It is classified as a Level 1 Moisture Sensitivity Device per J-STD-020.
The complementary PNP type is BCP5316Q.