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The BCP5616E6327HTSA1 is an NPN silicon AF transistor from the Infineon BCP54...-BCP56 series, housed in a SOT223 package. It features a collector-emitter voltage (VCEO) of 80 V and a continuous collector current (IC) of 1 A. The device supports a peak collector current (ICM) of 1.5 A with a total power dissipation (Ptot) of 2 W at case temperatures up to 120°C. Key electrical characteristics include a DC current gain (hFE) ranging from 100 to 250 at IC = 150 mA, and a transition frequency (fT) typified at 100 MHz.
Verify the specific ordering suffix E6327HTSA1 against official Infineon documentation to confirm exact packaging configuration and RoHS compliance status. Ensure compatibility with SOT223 footprint requirements during PCB layout. Confirm that the 80 V rating aligns with circuit design constraints. Validate supply chain authenticity through authorized distributors.
Select this component when an NPN transistor requires 80 V breakdown voltage and 1 A continuous current handling. The BCP56 variant offers higher voltage tolerance compared to BCP54 or BCP55 counterparts. Consider the complementary PNP types BCP51, BCP52, and BCP53 for push-pull configurations. Evaluate thermal resistance RthJS of 15 K/W for heat dissipation planning.
This part belongs to the BCP54...-BCP56 family of NPN silicon planar transistors designed for audio frequency applications. The series provides complementary PNP options and utilizes a molded plastic SOT223 case with UL flammability rating 94V-0. The components are Pb-free and suitable for surface-mount assembly processes.
Complementary PNP types in the same series are BCP51, BCP52, and BCP53. Other variants within the family include BCP54 and BCP55, which differ primarily in collector-emitter voltage ratings of 45 V and 60 V respectively.