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Product Detailed Parameters
- Description：TRANS NPN 80V 1A SOT-223-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：1:00 AM
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 150mA, 2V
- Power - Max：2.5 W
- Frequency - Transition：150MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-261-4, TO-261AA
- Supplier Device Package：SOT-223-3
- Grade：-
- Qualification：-
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Overview
The BCP5616TTA is an NPN medium power transistor manufactured by Diodes Incorporated, housed in a SOT223 surface-mount package. It features a collector-emitter breakdown voltage (BVCEO) of 80V and a continuous collector current (IC) rating of 1A. The device supports a peak pulse collector current (ICM) of 2A and offers a power dissipation capability of 2W to 2.5W depending on thermal conditions. Electrical characteristics include a low saturation voltage VCE(sat) below 500mV at 0.5A and a transition frequency (fT) ranging from 100MHz to 150MHz at 50mA.
Feature Summary
- High continuous collector current capability for robust switching performance
- Low collector-emitter saturation voltage to minimize conduction losses
- Totally lead-free and fully RoHS compliant construction
- Halogen- and antimony-free green device formulation
Applications
- Medium power switching applications
- Amplification circuits
- Audio frequency driver stages
- Output stage configurations
Procurement Notes
Verify the specific ordering suffix TTA against the manufacturer's official documentation to confirm reel size and quantity specifications. Ensure compliance with environmental directives such as RoHS 2 and RoHS 3 requirements. Confirm that the component meets the necessary automotive or industrial standards if required for the intended application environment.
Selection Notes
Select this component for designs requiring high current handling in a compact surface-mount footprint. Consider the thermal resistance values when designing heat dissipation strategies. Evaluate the hFE gain ranges across different collector currents to ensure proper biasing for linear or saturated operation modes within the circuit constraints.
Part Context
This part belongs to the BCP5616 series of NPN medium power transistors designed for general-purpose amplification and switching tasks. It serves as a complement to PNP types within the same family. The SOT223 package provides efficient thermal management through the exposed collector pad, suitable for PCB-mounted applications.
Replacement Considerations
Consult the manufacturer datasheet for direct cross-reference information. Verify pinout compatibility and electrical parameter margins before substituting with components from other manufacturers.
FAQ
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter breakdown voltage (BVCEO) is rated at 80V.
Is this component suitable for automotive applications?
Standard versions are not explicitly qualified for automotive use; contact the manufacturer for automotive-compliant parts like the BCP5616TQ.
What is the typical transition frequency?
The transition frequency (fT) typically ranges from 100MHz to 150MHz at a collector current of 50mA.
