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The BCP56TA is an NPN silicon bipolar junction transistor manufactured by Diodes Incorporated. It features a maximum collector-emitter voltage of 80 V and a continuous collector current rating of 1 A. The device operates within a temperature range of -55°C to +150°C. Key electrical parameters include a gain-bandwidth product of 150 MHz, a DC current gain (hFE) ranging from 40 to 250, and a power dissipation capacity of 2 W. It utilizes a SOT-223-3 surface-mount package.
Verify the specific suffix TA against the manufacturer's datasheet to confirm packaging details and reel specifications. Ensure the component matches the required SOT-223-3 footprint and pinout configuration for your PCB design. Cross-reference RoHS compliance status with current regulatory requirements before finalizing procurement.
Select this component when an NPN transistor with 80 V breakdown and 1 A current capacity is required in a SOT-223 package. Consider the complementary BCP53TA if a PNP counterpart is needed for push-pull configurations. Evaluate thermal management needs based on the 2 W power dissipation limit and ambient operating conditions.
The BCP56TA belongs to the BCP56 series of NPN medium power transistors from Diodes Incorporated. This series is designed for general-purpose applications requiring reliable performance in surface-mount layouts. The device complements other members of the family, such as the BCP51, BCP52, and BCP53, which offer similar characteristics with varying polarities or ratings.
The maximum collector-emitter voltage (VCEO) is 80 V.
Yes, the BCP53 series provides the complementary PNP type within the same family.
The device supports a junction temperature range from -55°C to +150°C.