BCP56TA

BCP56TA

$0.37
  • Description:TRANS NPN 80V 1A SOT-223-3
  • Series:-

SKU:740562b4fcda Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN 80V 1A SOT-223-3
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
  • Power - Max:2 W
  • Frequency - Transition:150MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-261-4, TO-261AA
  • Supplier Device Package:SOT-223-3
  • Grade:-
  • Qualification:-

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BCP56TA

Overview

The BCP56TA is an NPN silicon bipolar junction transistor manufactured by Diodes Incorporated. It features a maximum collector-emitter voltage of 80 V and a continuous collector current rating of 1 A. The device operates within a temperature range of -55°C to +150°C. Key electrical parameters include a gain-bandwidth product of 150 MHz, a DC current gain (hFE) ranging from 40 to 250, and a power dissipation capacity of 2 W. It utilizes a SOT-223-3 surface-mount package.

Feature Summary

  • High continuous collector current capability for medium-power switching applications
  • Wide operating temperature range suitable for demanding environments
  • Complementary PNP types available in the same series

Applications

  • General-purpose switching circuits
  • Amplifier stages requiring medium power handling
  • Driver circuits for loads up to 1 A

Procurement Notes

Verify the specific suffix TA against the manufacturer's datasheet to confirm packaging details and reel specifications. Ensure the component matches the required SOT-223-3 footprint and pinout configuration for your PCB design. Cross-reference RoHS compliance status with current regulatory requirements before finalizing procurement.

Selection Notes

Select this component when an NPN transistor with 80 V breakdown and 1 A current capacity is required in a SOT-223 package. Consider the complementary BCP53TA if a PNP counterpart is needed for push-pull configurations. Evaluate thermal management needs based on the 2 W power dissipation limit and ambient operating conditions.

Part Context

The BCP56TA belongs to the BCP56 series of NPN medium power transistors from Diodes Incorporated. This series is designed for general-purpose applications requiring reliable performance in surface-mount layouts. The device complements other members of the family, such as the BCP51, BCP52, and BCP53, which offer similar characteristics with varying polarities or ratings.

Replacement Considerations

  • BCP56T1G

FAQ

What is the maximum collector-emitter voltage for the BCP56TA?

The maximum collector-emitter voltage (VCEO) is 80 V.

Is the BCP56TA available in a complementary PNP version?

Yes, the BCP53 series provides the complementary PNP type within the same family.

What is the recommended operating temperature range?

The device supports a junction temperature range from -55°C to +150°C.

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