SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BCP69-16/DG,115 is a PNP medium power transistor manufactured by Nexperia (formerly NXP) in the SOT223 surface-mounted device plastic package. It features a collector-emitter voltage of -20 V and a continuous collector current of -2 A. The component provides three DC current gain selections; the -16 variant offers an hFE range of 100 to 250 at IC = -500 mA and VCE = -1 V. Total power dissipation reaches up to 1.65 W on a four-layer FR4 PCB with a 1 cm² collector pad. The device is qualified under the AEC-Q101 standard for automotive applications.
Verify the specific ordering suffix against the manufacturer's latest documentation to confirm packaging details and availability status. Confirm that the selected part number matches the required current gain bin (-16) for your application specifications. Ensure compliance with RoHS directives and check for any recent product change notices or obsolescence warnings issued by Nexperia before finalizing procurement plans.
Select this component when a PNP transistor with high current handling and robust thermal performance is required in a compact SMD form factor. The -16 gain bin is appropriate for designs needing moderate current amplification. Consider the exposed collector pad requirements for proper heat sinking during PCB layout. Verify that the operating voltage and current limits remain within the specified absolute maximum ratings to ensure long-term reliability.
This device belongs to the BCP69 series of medium power transistors, which also includes the BC869 and BC69PA variants. These components share similar electrical characteristics but differ in package types such as SOT89 and SOT1061. The series is designed to provide flexible solutions for power management and signal processing applications across industrial and consumer electronics markets.
The datasheet lists the BCP68 as the NPN complement. No direct public substitute part numbers are documented in the provided source material.