BCV26E6327HTSA1

Overview

BCV26E6327HTSA1 is a PNP silicon Darlington transistor in an SOT-23 surface-mount package. It features a maximum collector-emitter voltage of 30 V, a continuous collector current of 500 mA, and a minimum DC current gain (hFE) of 4000. The device operates within a temperature range of -65°C to +150°C.

Feature Summary

• High current amplification capability with a minimum hFE of 4000
• Robust thermal performance supporting operation up to 150°C junction temperature
• Compact SOT-23 surface-mount packaging for space-constrained designs

Applications

• High-gain amplifier circuits
• Switching applications requiring high input impedance
• Driver stages for low-current loads

Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm the specific suffix HTSA1 matches project requirements. Check for end-of-life status as discontinuation notices may affect long-term supply stability. Ensure storage conditions comply with moisture sensitivity level specifications.

Selection Notes

Select this component when high current gain is critical for signal amplification or switching efficiency. The PNP configuration suits applications requiring current sourcing from a positive rail. Evaluate thermal management needs given the 150°C maximum operating temperature limit and power dissipation constraints in the SOT-23 package.

Part Context

The BCV26 series represents Infineon's portfolio of PNP Darlington transistors designed for general-purpose amplification and switching. These devices integrate two transistors on a single chip to achieve significantly higher current gains than standard bipolar junction transistors, simplifying circuit design by reducing external component count.

Replacement Considerations

• BCV26E6327XT