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The BCV47QTC is an NPN Darlington transistor manufactured by Diodes Incorporated, housed in a SOT-23 surface-mount package. It features a collector-emitter breakdown voltage (BVCEO) of 60 V and supports a continuous collector current (IC) of 500 mA. The device offers high static forward current transfer ratio (hFE), reaching up to 10,000 at IC = 100 mA and VCE = 5 V. Electrical characteristics include a transition frequency (fT) of 170 MHz and a maximum power dissipation of 310 mW. The component operates within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix 'C' corresponds to the required reel size and packing quantity before finalizing orders. Confirm that the AEC-Q101 qualification status meets project requirements. Ensure compliance with IATF 16949 manufacturing standards if applicable to your supply chain protocols. Cross-reference datasheet revision DS39807 Rev. 3-2 for accurate specifications.
Select this component when high current gain and automotive-grade reliability are required in a compact SOT-23 footprint. Consider the complementary BCV46Q PNP type for push-pull configurations. Evaluate thermal resistance values against expected ambient temperatures and PCB copper coverage to ensure safe operation within the 310 mW power dissipation limit.
This part belongs to the BCV47Q family of NPN Darlington transistors designed specifically for stringent automotive environments. It is manufactured in IATF 16949 certified facilities and is suitable for applications demanding specific change control procedures. The series provides robust performance with high hFE and reliable switching capabilities.
BCV47QTA serves as a parameter-equivalent alternative with different packaging quantities. Verify mechanical compatibility and electrical equivalence before substitution.